Barrier-Height Imaging of Si(001) 2 × n

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概要

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• We have carried out barrier-height imaging on clean Si(001) 2 × 1 and Ni-contaminated 2 × n surface and investigated the local barrier-height variation at and around Ni-relarted dimer-vacancy (DV) defects which are referred to as (1+2)-DVs. The barrier-height images show atomic contrast which conforms nicely with corresponding constant-current scanning-tunneling-microscopy (STM) topographs. No strong defect-induced modification was observed in the local barrier height at (1+2)-DV. Our direct barrier-height measurements thus provide a negative on the barrier-height reduction at (1+2)-DV, which was predicted by Ukraintsev et al. [Surf. Sci. 388 (1997) 132)].

• 社団法人応用物理学会の論文
• 1998-06-30

著者

• Hasegawa Y

  Institute For Solid State Physics University Of Tokyo

• Hasegawa Yukio

  Institute For Materials Research (imr) Tohoku University And Precursory Research For Embryonic Scien

• Kurokawa S

  Kyoto Univ. Kyoto Jpn

• Kurokawa Shu

  Mesoscopic Materials Research Center Faculty Of Engineering Kyoto University

• Sakai Akira

  Mesoscopic Materials Research Center

• Fukumizu Hiroyuki

  Mesoscopic Materials Research Center Faculty Of Engineering Kyoto University

• Kuromizu Shu

  Mesoscopic Materials Research Center, Faculty of Engineering, Kyoto University

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