3p-K-7 A New Strain Relaxation Mechanism in the InAs/GaAs(001) System Observed by Scanning tunneling Microscopy
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1996-03-15
著者
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Xue Qikun
Institute For Materials Research (imr) Tohoku University
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Hasegawa Y
Institute For Solid State Physics University Of Tokyo
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Sakurai T
Institute For Chemical Research Kyoto University
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Ogino T
Institute for Materials Research (IMR), Tohoku University
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Kiyama H
Institute for Materials Research (IMR), Tohoku University
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Kiyama H
Institute For Materials Research (imr) Tohoku University
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- 3p-K-7 A New Strain Relaxation Mechanism in the InAs/GaAs(001) System Observed by Scanning tunneling Microscopy
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