Galvanic Corrosion Control in Chemical Mechanical Polishing of Cu Interconnects with Ruthenium Barrier Metal Film
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概要
- 論文の詳細を見る
We investigated galvanic corrosion in Cu interconnects with ruthenium (Ru) barrier metal films that occurred in Cu chemical mechanical polishing (CMP) and Ru-CMP steps. When conventional CMP slurries were used in the same polishing conditions, severe dishing was found to occur in Ru barrier interconnects. This dishing was attributed to the electrochemical potential difference between Cu and Ru in the CMP slurries. Thus, we reduced this potential difference in the slurry from 400 to 2 mV, and we suppressed dishing just after Cu-CMP from 27 to 9 nm. As a result, by using Ru slurry with a controlled corrosion potential, we minimized final dishing after Ru-CMP to 25 nm which was lower than that of conventional Ta barrier interconnects.
- 2009-04-25
著者
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Kondo Seiichi
Semiconductor Leading Edge Technologies Inc. (selete)
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Saito Shuichi
Semiconductor Leading Edge Technologies Inc. (selete)
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Shiohara Morio
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Maruyama Koji
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yamada Kouji
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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