Effect of Dissolved Oxygen on Cu Corrosion in Single Wafer Cleaning Process
スポンサーリンク
概要
- 論文の詳細を見る
We investigated Cu corrosion at the via bottom of multi-layered Cu interconnects that occurred after post-etching wet cleaning and caused via open failures. We found that oxygen was dissolved into de-ionized water (DIW) on the wafer edge from the air atmosphere during the rinse step after chemical cleaning and that Cu was oxidized due to the high oxidation-reduction potential (ORP) of the rinse DIW. To prevent Cu interconnects from being corroded, control of the dissolved oxygen and the ORP of the rinse DIW by decreasing the oxygen concentration of the atmosphere in the cleaning machine as well as by using H2 water is required. This will become indispensable in the cleaning process of the next generation Cu interconnects.
- 2009-04-25
著者
-
Kondo Seiichi
Semiconductor Leading Edge Technologies Inc. (selete)
-
Saito Shuichi
Semiconductor Leading Edge Technologies Inc. (selete)
-
Saito Shuichi
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Yamashita Yukinari
Organo Corporation, R&D Center, 4-4-1 Nishionuma, Sagamihara, Kanagawa 229-0012, Japan
-
Shiohara Morio
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Futatsuki Takashi
Organo Corporation, R&D Center, 4-4-1 Nishionuma, Sagamihara, Kanagawa 229-0012, Japan
-
Imai Masayoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Yamashita Yukinari
Organo Corporation, R&D Center, 4-4-1 Nishionuma, Sagamihara, Kanagawa 229-0012, Japan
関連論文
- Plasma Cure Process for Porous SiOCH Films using CF_4 Gas
- Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance
- SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
- Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
- Galvanic Corrosion Control in Chemical Mechanical Polishing of Cu Interconnects with Ruthenium Barrier Metal Film
- Effect of Pattern Layout and Dissolved Oxygen in CO2 Rinse Water on Cu Corrosion during Post-Etch Cleaning
- Effect of Dissolved Oxygen on Cu Corrosion in Single Wafer Cleaning Process
- Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations