Application of Extreme Ultraviolet Lithography to Test Chip Fabrication

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概要

• 論文の詳細を見る

• Extreme ultraviolet (EUV) lithography is considered to be the most promising technology for meeting the lithographic challenges posed by the next generation semiconductor design rule beyond a half pitch (hp) of 22 nm. A key area of the Selete EUV program is proof of manufacturability, which means verification of module integration for EUV lithography. To accomplish this, many technologies [e.g., mask, exposure tool, resist, optical proximity correction (OPC)] need to be developed and integrated. In this paper, we discuss the current status of each of them. To verify EUV's manufacturability, we applied EUV to test chip fabrication, metal wiring fabrication, and electrical measurement. The yield number of the hp 28 nm pattern is 70% after improving the resist and the etching process. These results show demonstrate that EUV lithography is a practical technology that is now suitable for semiconductor devices for 2x nm area.

• 2011-06-25

著者

• Aoyama Hajime

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan

• Kyoh Suigen

  Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita, Isogo-ku, Yokohama 235-8522, Japan

• Nakajima Yumi

  Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita, Isogo-ku, Yokohama 235-8522, Japan

• Tanaka Satoshi

  Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita, Isogo-ku, Yokohama 235-8522, Japan

• Tawarayama Kazuo

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Matsunaga Kentaro

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Magoshi Shunko

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Aoyama Hajime

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

関連論文

• Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
• Resolution Enhancement for Beyond-22-nm Node Using Extreme Ultraviolet Exposure Tool
• Flare Impact and Correction for Critical Dimension Control with Full-Field Exposure Tool
• Lithographic Performance of Extreme Ultravolet Full-Field Exposure Tool at Selete
• Extreme Ultraviolet Lithography Using Small-Field Exposure Tool: Current Status
• Application of Extreme Ultraviolet Lithography to Test Chip Fabrication

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