Direct Formation of Three-Dimensional Structures in GaAs by Excimer Laser Doping
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概要
- 論文の詳細を見る
Direct formation of three-dimensional structures of Si in GaAs by excimer laser doping has been demonstrated. The doped Si is limited in a very shallow region ($30{\sim}110$ nm) of GaAs with very high concentration (${>}1\times 10^{20}$ cm-3) that might be controlled easily by laser irradiation conditions. By using a thin solid Si dopant source, linewidths as narrow as 0.3 $\mu$m are achieved. On the other hand, the linewidths of 0.76 $\mu$m are obtained by projection patterned doping in SiH4 gas ambient. The linewidths of the doped regions are discussed relating to the lateral profiles of the calculated transient temperature rise of the substrates.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Sugioka Koji
Riken The Institute Of Physical And Chemical Research
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Toyoda Koichi
Riken The Institute Of Physical And Chemical Research
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Toyoda Koichi
Riken, the Institute of Physical and Chemical Research Wako, Saitama, 351-01, Japan
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Sugioka Koji
Riken, the Institute of Physical and Chemical Research Wako, Saitama, 351-01, Japan
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