1.0V Operation Power Heterojunction FET for Digital Cellular Phones
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概要
- 論文の詳細を見る
This paper describes 1.0V operation power performance of a double doped AIGaAs/InGaAs/AIGaAs heterojunction FET for personal digital cellular phones. The developed FET with a multilayer cap consisting of a highly Si-doped GaAs, an undoped GaAs and a highly Si-doped AIGaAs exhibited an on-resistance of 1.3Ω・mm and a maximum drain current of 620mA/mm. A 28mm gate-width device, operating with a drain bias voltage of 1.0V, demonstrated an output power of 1.0W, a power-added efficiency of 59% and an associated gain of 13.7dB at an adjacent channel leakage power at 50kHz offcenter frequency of -48dBc with a 950MHz π/4-shifted quadrature phase shift keying signal.
- 社団法人電子情報通信学会の論文
- 2001-02-01
著者
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Iwata Naotaka
Kansai Electronics Research Laboratories Nec Corporation
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Kato Takatoshi
Product Development Department Microwave Products Group Device Products Division Murata Mfg. Co. Ltd
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KATO Takehiko
Kansai Electronics Research Laboratories, NEC Corporation
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BITO Yasunori
Kansai Electronics Research Laboratories, NEC Corporation
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Kato Takehiko
Kansai Electronics Research Laboratories Nec Corporation
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Bito Yasunori
Kansai Electronics Research Laboratories Nec Corporation
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