Rapid Thermal Annealing Technique for Polycrystalline Silicon Thin-Film Transistors

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概要

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• The fundamental characteristics of a rapid thermal annealing (RTA) technique that has been applied to polycrystalline silicon thin-film transistors (poly-Si TFTs) have been investigated and short channel (less than 3 μm) poly-Si TFTs have been achieved. The annealing characteristics of a thin silicon film on a transmissive substrate are entirely different from those of a silicon wafer. An arc lamp is essential as the RTA light source. A self-controlled effect in activation annealing was observed. Size and pattern density of silicon islands affect the uniformity of annealing. An absorption layer of a silicon film makes the use of RTA practical. A shift-register circuit composed of short channel TFTs was also evaluated.

• 社団法人応用物理学会の論文
• 1994-03-15

著者

• Yudasaka Ichio

  Seiko Epson Corporation Tft

• Ohshima Hiroyuki

  Mim Research Laboratory

関連論文

• Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator
• Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors
• Wettability of Silicon Oxide with Poly-Crystalline Silicon
• TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)
• Rapid Thermal Annealing Technique for Polycrystalline Silicon Thin-Film Transistors

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