Plasma Oxidation of Silicon and its Application to Poly-Si TFT Fabrication Process
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概要
- 論文の詳細を見る
In this paper, we present the results of plasma oxidation of silicon carried out by applying RF power to a gas mixture of helium and oxygen at a temperature of 400 degree C or below. Stoichiometric SiO_2 films with properties close to thermally grown SiO_2 films were obtained using this process. By incorporating less than 100 angstroms of the above film between the polysilicon layer and the gate insulator layer(deposited SiO_2)of polysihcon TFTs, we were able to improve the values of sub-threshold slope and mobility as well as uniformity of device characteristics of TFTs made on substrate as large as 300mm X 300mm.
- 社団法人電子情報通信学会の論文
- 2000-10-13
著者
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Shimoda T
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology
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Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
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Inoue S
Seiko Epson Corporation
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Kakkad R.
Base Technology Research Center
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Inoue S.
Base Technology Research Center
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Shimoda T.
Base Technology Research Center
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Abe H.
LT Process Development Department Seiko-Epson Corporation
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Kinoe Y.
LT Process Development Department Seiko-Epson Corporation
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Noguchi T.
LT Process Development Department Seiko-Epson Corporation
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