Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Van Der
Delft Univ. Technol. Delft Nld
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ISHIHARA Ryoichi
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr
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Ishihara Ryoichi
Laboratory Of Electronic Components Technology And Materials (ectm)
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Ishihara Ryoichi
Laboratory Of Electronic Components And Materials (ectm) Delft Institute Of Microelectronics And Sub
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Van Der
Delft Institute Of Microelectronics And Submicron Technology (dimes) Delft University Of Technology
関連論文
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- The Effect of Plastic Deformation of Austenite on the Kinetics of Subsequent Ferrite Formation
- Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100℃
- Determination of Martensite Start Temperature for Engineering Steels Part II. Correlation between Critical Driving Force and Ms Temperature
- Thermal and Mechanical Stability of Retained Austenite in Aluminum-containing Multiphase TRIP Steels
- Modelling the Austenite to Ferrite Phase Transformation in Low Carbon Steels in Terms of the Interface Mobility
- Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
- Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
- E205 TAR AND SOOT IN LOW CALORIFIC VALUE GAS COMBUSTON
- Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
- Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
- Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
- Towards the Integration of Carbon Nanotubes as Vias in Monolithic Three-Dimensional Integrated Circuits
- Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and μ-Czochralski Process