Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films

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概要

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• We propose a method to locate a large silicon (Si) crystal grain at a predetermined position on a glass substrate following excimer-laser melting of Si thin-film. The thickness of part of the intermediate insulator of the amorphous-Si (a-Si)/insulator/metal/glass structure was imcreased. After the irradiation by dual-beam light to both the back and front sides of the structure, a Si crystal grain as large as 4μm was located exactly at the center of the predetermined position, for wide range of diameter of the thick portion and irradiatied light energy density.

• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Ishihara Ryoichi

  Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institure Of Microelectron

• Ishihara Ryoichi

  Laboratory Of Electronic Components And Materials (ectm) Delft Institute Of Microelectronics And Sub

• Burtsev A

  Delft Univ. Technol. Delft Nld

• Burtsev Artyom

  Laboratory Of Electronic Components Technology And Materials(ectm) Delft Institute Of Microelectroni

関連論文

• Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
• Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
• Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
• Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
• Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
• Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and μ-Czochralski Process

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