Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• ISHIHARA Ryoichi

  Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr

• Ishihara Ryoichi

  Laboratory Of Electronic Components And Materials (ectm) Delft Institute Of Microelectronics And Sub

関連論文

• Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100℃
• Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
• Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
• Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
• Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
• Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
• Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and μ-Czochralski Process

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