Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and μ-Czochralski Process
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概要
- 論文の詳細を見る
We investigated a new technique of location and orientation control by combining metal-induced lateral crystallization (MILC) as precrystallization for the orientation control with the μ-Czochralski process, in which the location control is realized using a grain filter. The electron back scattering diffraction (EBSD) analysis showed that the surface crystal orientation of the location-controlled Si islands has a strong $\langle 100\rangle$ preference without random grain boundaries inside the islands.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
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Metselaar Wim
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Beenakker Kees
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Ishihara Ryoichi
Laboratory Of Electronic Components And Materials (ectm) Delft Institute Of Microelectronics And Sub
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Wu Meng-Yue
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
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Beenakker Kees
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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Tao Chen
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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Ishihara Ryoichi
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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Metselaar Wim
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P. O. Box 5053, 2600 GB Delft, The Netherlands
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- Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and μ-Czochralski Process