Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion

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概要

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• An array of large Si grains was placed at a predetermined position by dual excimer-laser irradiation of a multi-layer structure of silicon(Si), silicon dioxide(SiO_2)with an array of bumps and metal on a glass substrate. We have investigated the effects of irradiating energy density and the topology of the structure on the grain size and crystallographic structure by scanning electron microscopy(SEM)and electron back-scattering pattern(EBSP)analysis. In the low-energy-density regime, numerous small grains and petal shaped grains formed on top of the SiO_2 bumps. The number of small grains on the bumps decreased with increasing irradiating energy density. At sufficiently high energy densities, one single Si grain as large as 3.5μm was positioned at the center of the bumps. Although most of the area of the large Si grain has a single crystallographic orientation, twins and low-angle grain boundaries are often formed at the periphery of the grain. There was no preferred crystallographic orientation in the center of the location-controlled Si grain. Numerical analysis of the temperature profile showed that a temperature drop occurs at the center of the bump, during and immediately after laser irradiation. The diameter of the location-controlled Si grain increased with total thickness of the intermediate SiO_2 layer, and took the maximum value of 6.2μm.

• 社団法人応用物理学会の論文
• 2000-07-15

著者

• Ishihara Ryoichi

  Laboratory Of Electronic Components Technology And Materials(ectm) Delft Institute Of Microelectroni

• Ishihara Ryoichi

  Laboratory Of Electronic Components And Materials (ectm) Delft Institute Of Microelectronics And Sub

• BURTSEV Artyom

  Laboratory of Electronic Components, Technology and Materials(ECTM), Delft Institute of Microelectro

• ALKEMADE Paul

  Delft Institute of Microelectronics and Submicrontechnology(DIMES), Department of Applied Physics, D

• Alkemade Paul

  Delft Institute Of Microelectronics And Submicrontechnology(dimes) Department Of Applied Physics Del

• Burtsev Artyom

  Laboratory Of Electronic Components Technology And Materials(ectm) Delft Institute Of Microelectroni

関連論文

• Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
• Location Control of Crystal Si Grain Followed by Excimer-Laser Melting of Si Thin-Films
• Location-Control of Large Si Grains by Dual-Beam Excimer-Laser and Thick Oxide Portion
• Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films
• Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
• Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and μ-Czochralski Process

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