Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
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概要
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Large polycrystalline silicon (poly-Si) grains with a diameter of 1.8 μm are successfully prepared by excimer laser crystallization (ELC) of a sputtered amorphous silicon ($\alpha$-Si) film at a maximum process temperature of 100 °C. By pulsed DC magnetron sputtering, $\alpha$-Si is deposited on a non-structured oxidized wafer. It is found that the $\alpha$-Si film deposited with a bias is easily ablated during ELC, even at an energy density below the super lateral growth (SLG) region. However, the $\alpha$-Si film deposited without a bias can endure an energy density well beyond the SLG region without ablation. This zero-bias sputtered $\alpha$-Si film with a high compressive stress has a low Ar content and a high density, which is beneficial for the suppression of ablation. Large grains with a petal-like shape can be obtained in a wide energy density window, which can be a result from some fine crystallites in the $\alpha$-Si matrix. These large grains with a low process temperature are promising for the direct formation of system circuits as well as a high-quality display on a plastic foil.
- 2007-03-30
著者
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Metselaar Wim
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Beenakker Kees
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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HE Ming
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr
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Van Andel
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Neihof Ellen
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Schellevis Hugo
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Ishihara Ryoichi
Laboratory Of Electronic Components And Materials (ectm) Delft Institute Of Microelectronics And Sub
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Beenakker Kees
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2628 CT Delft, The Netherlands
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Ishihara Ryoichi
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2628 CT Delft, The Netherlands
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He Ming
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2628 CT Delft, The Netherlands
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Schellevis Hugo
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2628 CT Delft, The Netherlands
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Neihof Ellen
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2628 CT Delft, The Netherlands
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Metselaar Wim
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2628 CT Delft, The Netherlands
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