Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100℃
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-30
著者
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Metselaar Wim
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Beenakker Kees
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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HE Ming
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr
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ISHIHARA Ryoichi
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr
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NEIHOF Ellen
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr
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VAN ANDEL
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr
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SCHELLEVIS Hugo
Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectr
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Schellevis Hugo
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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Ishihara R
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
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- Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 °C
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