A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors(<Special Section>Electronic Displays)

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CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd: YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84cm^2/Vs and 75cm^2/Vs. respectively.
社団法人電子情報通信学会の論文
2006-10-01

著者

Metselaar Wim
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
Beenakker Kees
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
ISHIHARA Ryoichi
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology
GLAZER Arie
Orbotech Corporation
RAAB Yoel
Orbotech Corporation
RUSIAN Peter
Orbotech Corporation
DORFAN Mannie
Orbotech Corporation
LAVI Benzi
Orbotech Corporation
LEIZERSON Ilya
Orbotech Corporation
KISHINEVSKY Albert
Orbotech Corporation
VAN ANDEL
Orbotech Corporation
CAO Xin
Orbotech Corporation
METSELAAR Wim
Orbotech Corporation
BEENAKKER Kees
Orbotech Corporation
STOLYAROVA Sara
Department of Electrical Engineering, Technion-Israel Institute of Technology
NEMIROVSKY Yael
Department of Electrical Engineering, Technion-Israel Institute of Technology
Van Andel
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
Ishihara R
Laboratory Of Electronic Components Technology And Materials (ectm) Delft Institute Of Microelectron
Stolyarova Sara
Department Of Electrical Engineering Technion-israel Institute Of Technology
Nemirovsky Yael
Department Of Electrical Engineering Technion-israel Institute Of Technology
Ishihara Ryoichi
Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), Department of Microelectronics and Computer Engineering (ME&CE), Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Feldmannweg 17,

A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors(<Special Section>Electronic Displays)

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