High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing

スポンサーリンク

概要

• 論文の詳細を見る

• Polycrystalline silicon (p-Si) thin-film transistors (TFTs) were fabricated using a high-temperature process that included solid-phase crystallization (SPC) and dry thermal oxidation with excimer laser annealing (ELA). X-ray diffraction and transmission electron microscopy analyses showed that the ELA process improved the quality of p-Si films markedly. The p-Si TFTs exhibited a higher performance than the SPC and a-Si+ELA p-Si TFTs. The field-effect mobility for n-type self-aligned TFTs was 251 cm2$\cdot$V-1$\cdot$s-1. The longitudinal junction diffusion length of the p-Si TFTs was shorter than that of the SPC p-Si TFTs. This is favorable for fine design rules. This fabrication process is consistent with the high-temperature-processed p-Si TFT development trend towards using large substrates, low temperatures, and fine design rules.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• INOUE Satoshi

  Technology Platform Research Center, Seiko Epson Cooperation

• Shimoda Tatsuya

  Technology Platform Research Center Seiko Epson Corp.

• TSUNEKAWA Yoshifumi

  TFT Design Technology Department, SEIKO EPSON Corporation

• Jiroku Hiroaki

  Technology Platform Research Center Seiko Epson Corporation

• Miyasaka Mitsutoshi

  Technology Platform Research Center Seiko Epson Corporation

• Tsunekawa Yoshifumi

  TFT Design Technology Department, SEIKO EPSON Corporation, 1010 Fujimi, Suwa-gun, Nagano 399-0295, Japan

• Miyasaka Mitsutoshi

  Technology Platform Research Center, SEIKO EPSON Corporation, 281 Fujimi, Suwa-gun, Nagano 399-0293, Japan

• Jiroku Hiroaki

  Technology Platform Research Center, SEIKO EPSON Corporation, 281 Fujimi, Suwa-gun, Nagano 399-0293, Japan

関連論文

• High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by μ-Czochralski Process(Electronic Displays)
• 表側と裏側の絶縁膜界面にトラップ準位をもつポリシリコン薄膜トランジスタのデバイスシミュレーション(ディスプレイ-IDW'03関連-)
• Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
• Numerical Model of Thin-Film Transistors for Circuit Simulation Using Spline Interpolation with Transformation by y=x + log(x)(Regular Section)
• Novel Si Codoped Pb(Zr, Ti, Nb)O_3 Thin Film for High-Density Ferroelectric Random Access Memory
• Fabrication of KNbO_3 Epitaxial Thin Films on Sapphire Substrates by Pulsed Laser Deposition
• Fabrication of Pseudocubic SrRuO_3 (100) Epitaxial Thin Films on Si by Pulsed Laser Deposition : Surfaces, Interfaces, and Films
• Microstructural Investigation of Pulsed-Laser-Deposited SrRuO_3 Films on Si with SrO Buffer Layers : Semiconductors
• Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors
• Invited Asynchronous Architecture and Its Impact on Low-Power TFT CPUs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Invited Asynchronous Architecture and Its Impact on Low-Power TFT CPUs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Inkjet Printing of Polymeric Field-Effect Transistors and Its Applications
• High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing
• Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
• Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
• Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
• Evaluation of Imprint Property of (111)-Highly Oriented Lead Zirconate Titanate (PZT)-Base Ferroelectric Material
• High-Performance Polycrystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process
• Time-Ratio Grayscale and Hopping Scan with Current Uniformization for Thin-Film Transistor Driven Organic Light-Emitting Diode Displays
• Artificial Retina Using Thin-Film Photodiodes and Thin-Film Transistors
• Effects of Capping Layer on Grain Growth with $\mu$-Czochralski Process during Excimer Laser Crystallization
• Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
• High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing
• GaInNAs/GaAs Multiple-Quantum-Well Grown by Metalorganic Chemical Vapor Deposition Using Nitrogen Carrier Gas
• Micropatterning of SrBi2Ta2O9 Ferroelectric Thin Films Using a Selective Deposition Technique Combined with Patterned Self-Assembled Monolayers and Liquid-Source Misted Chemical Deposition
• Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy

もっと見る 閉じる

スポンサーリンク