Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process

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概要

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• We have studied the reliability of polycrystalline-silicon thin film transistors (poly-Si TFTs) fabricated by a low-temperature process below 425°C (low-temperature-processed poly-Si TFTs). When TFTs are contaminated with mobile ions, such as sodium (Na) or potassium (K), the transfer characteristics of TFTs show interesting behaviors due to a combination of contamination and self-heating. Since the temperature of TFTs during operation becomes high because of the high supply voltage and low heat conductivity of the glass substrate, the ions can easily drift corresponding to the polarity of the gate voltage. As a result, the transfer characteristics of n-channel TFTs are significantly shifted in the negative direction. Depending on the circumstances, degradation due solely to self-heating is induced simultaneously. In this case, the transfer characteristics are shifted in the negative direction at the first stage, and then the direction of shift is changed to the positive direction. The temperature of TFTs during operation becomes high compared with that of metal-oxide-semiconductor field effect transistors (MOSFETs), and TFTs are fabricated on glass substrates consisting of many component parts. Therefore, there is a possibility that this degradation is an essential issue in low-temperature-processed poly-Si TFTs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• INOUE Satoshi

  Technology Platform Research Center, Seiko Epson Cooperation

• Shimoda Tatsuya

  Technology Platform Research Center Seiko Epson Corp.

• Takenaka Satoshi

  Displays Operations Division Seiko Epson Corporation

• Takenaka Satoshi

  Displays Operations Division, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan

• Shimoda Tatsuya

  Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan

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