Physical Model for Current–Voltage Characteristics of Thin-Film Transistors
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概要
- 論文の詳細を見る
A physical model is proposed for the current–voltage ($I$–$V$) characteristics of thin-film transistors. Poisson's and carrier density equations are analytically solved in consideration of interface trap densities. The threshold voltage is no longer constant but dependent on the gate voltage and location in the channel region. The $I$–$V$ characteristics are seamlessly calculated in the linear, saturation, and sub-threshold regions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-03-25
著者
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Kimura Mutsumi
Department of Chemistry, Graduate School of Natural Science and Technology, Okayama University
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Kimura Mutsumi
Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan
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