SHIMODA Tatsuya | Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology

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概要

• 同名の論文著者
• Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technologyの論文著者

関連著者

• KIMURA Mutsumi

  Department of Electronics and Informatics, Ryukoku University

• INOUE Satoshi

  Frontier Device Research Center, Seiko Epson Corporation

• SHIMODA Tatsuya

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology

• Abe Daisuke

  Frontier Device Research Center Seiko Epson Corporation

• Yasuhara Tohru

  Department Of Electronics And Informatics Ryukoku University

• Yoshino Takuto

  Department Of Electronics And Informatics Ryukoku University

• 木村 睦

  龍谷大学電子情報学科

• 井上 聡

  セイコーエプソン株式会社フロンティアデバイス研究所

• 下田 達也

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology

• 木村 睦

  Department Of Electronics And Informatics Ryukoku University

• HARADA Kiyoshi

  Department of Electronics and Informatics, Ryukoku University

• YOSHINO Takuto

  Department of Electronics and Informatics, Ryukoku University

• YASUHARA Tohru

  Department of Electronics and Informatics, Ryukoku University

• ABE Daisuke

  Frontier Device Research Center, Seiko Epson Corporation

• Kimura Mutsumi

  Ryukoku University:innovative Materials And Processing Research Center

• Harada Kiyoshi

  Department Of Electronics And Informatics Ryukoku University

• Inoue S

  Seiko Epson Corporation

• Abe Daisuke

  Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Nagano 399-0293, Japan

• Kimura Mutsumi

  Department of Chemistry, Graduate School of Natural Science and Technology, Okayama University

• Harada Kiyoshi

  Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan

• Yoshino Takuto

  Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan

• Shimoda Tatsuya

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

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著作論文

• Extraction Technique of Trap Density at Grain Boundaries in Polycrystalline-Silicon Thin-Film Transistors with Device Simulation
• Extraction Technique of Trap Density at Grain Boundaries in Polycrystalline-Silicon Thin-Film Transistors with Device Simulation

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