A New Self-Aligned Process for Fabrication of Microemiter Arrays Using Selective Etching of Silicon
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概要
- 論文の詳細を見る
Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientaion dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi_2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10 V is demonstrated.
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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YASUDA Junji
Center for Microelectronic Systems, Kyushu Institute of Technology
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Yasuda Junji
Center For Microelectronic Systems Kyushu Institute Of Technology
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