Ion Beam Modified Photoresist : A New Class of Field Emitter Material for Large Area Devices (Special Issue on Electronic Displays)
スポンサーリンク
概要
- 論文の詳細を見る
Ion beam irradiation effects on a novolac positive-tone photoresist and its application to micron-size field emitters have been investigated. Irradiation of Ar and P ions was examined. The electrical resistivity of the photoresist film is found to decrease after Ar ion implantation at doses on the order of 10^<16>cm^<-2>. Baking of the photoresist prior to irradiation at a high temperature is preferred to produce electrical conductivity. P ions show weaker effects than Ar ions. Raman spectroscopy shows that carbon-carbon bonds such as the graphite bond are produced due to ion bombardment. The field emission of electrons is observed from emitters made of the ion-irradiated photoresist. The emission current is shown to be fairly stable when it ia compared with an emission characteristic of synthesized diamond. Fabrication of field emitter arrays using mold technique is demonstrated. The field emitter array shows emission at a current level of about 40μA.
- 社団法人電子情報通信学会の論文
- 1998-11-25
著者
-
Asano T
Kyushu Inst. Technol. Fukuoka Jpn
-
Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
-
SASAGURI Daisuke
Center for Microelectronic Systems, Kyushu Institute of Technology
-
HIGA Katsuya
Center for Microelectronic Systems, Kyushu Institute of Technology
-
Higa K
Oshima National Coll. Maritime Technol. Yamaguchi Jpn
-
Higa Katsuya
Center For Microelectronic Systems Kyushu Institute Of Technology
-
Sasaguri Daisuke
Center For Microelectronic Systems Kyushu Institute Of Technology
-
Sasaguri D
Center For Microelectronic Systems Kyushu Institute Of Technology
関連論文
- Ion Beam Modification of a Photoresist and Its Application to Field Emitters
- Field Emission from an Jon Irradiated Photoresist
- D315 A NOVEL FLUIDIC MICROMOTOR DRIVEN BY THERMOCAPILLARY FORCE(Micro-scale phenomena)
- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
- SOI-MOSFET/Diode Composite Photodetection Device
- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
- Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films
- Field Electron Emission from Inkjet-Printed Carbon Black
- Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars
- Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
- Suppressing Plasma Induced Degradation of Gate Oxide Using Silicon-on-Insulator Structures
- Suppressing Plasma Induced Degradation of Gate Oxide by Using Silicon-On-Insulator Structures
- Reduction of Charge Build-up during Reactive Ion Etching by Using SOI Structures
- Variation of Photoluminescence Properties of Stain-Etched Si with Crystallinity of Starting Polycrystalline Si Films
- Effects of Light Exposure during Anodization on Photoluminescence of Porous Si
- Ion Beam Modified Photoresist : A New Class of Field Emitter Material for Large Area Devices (Special Issue on Electronic Displays)
- Connection Test of Area Bump Using Active-Matrix Switches
- Connection Test of Area Bump Using Active-Matrix Switches
- Dynamic Strain and Chip Damage during Ultrasonic Flip Chip Bonding
- Dynamic Strain and Its Distribution during Ultrasonic Flip Chip Bonding
- CMOS Application of Single-Grain Thin Film Transistor Produced Using Metal Imprint Technology
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- Joule Heating of Field Emitter Tip Fabricated on Glass Substrate
- Influence of Direct Au-Bump Formation on Metal Oxide Semiconductor Field Effect Transistor
- Behavior of Plated Microbumps during Ultrasonic Flip-Chip Bounding Determined from Dynamic Strain Measurement
- Effects of Electric Field on Metal-Induced Lateral Crystallization under Limited Ni-Supply Condition(Thin Film Transistors, Fundamental and Application of Advanced Semiconductor Devices)
- Physical Random-Number Generator Using Schottky MOSFET
- Physical Random-Number Generator Using Schottky MOSFET
- Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET
- Enhancement of Absorption Magnitude of Short-Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
- Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Nearinfrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate
- Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
- Monitoring of Two-Dimensional Plasma Uniformity with Electrostatic Probing of Oxidized Wafer Surface : Semiconductors
- Imprint Lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transisor Fabrication
- Fabrication of Single-Crystal Silicon Field Emitter Array on Glass Substrate
- Measurement of Dynamic Strain during Ultrasonic Au Bump Formation on Si Chip
- New SOI Complementary-Bipolar Complementary-MOS(CBiCMOS)with Merged Device Structure
- A New Merged Bipolar-MOS Transistor in a Silicon on Insulator Structure
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Microheater-Driven Dancing Microbubble
- Easy Release of Mold in Imprint Lithography Using Ion-Beam-Irradiated Photoresist Surface
- Fabrication of Carbon-Based Field Emitters Using Stamp Technology
- A New Merged BiMOS Transistor in an SOI Structure
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching
- Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma Treatment
- Control of Si Solid Phase Nucleation by Surface Steps for High-Performance Thin-Film Transistors
- Si Field Emitter Arrays Fabricated by Anodization and Transfer Technique
- Gas Species Dependent Charge Build-Up in Reactive Ion Etching
- Synthesis and Electrical Properties of Phosphorus-Doped Homoepitaxial Diamond (111) by Microwave Plasma-Assisted Chemical Vapor Deposition Using Triethylphosphine as a Dopant Source
- Reduction of Charge Build-Up during Reactive Ion Etching by Using Silicon-On-Insulator Structures
- Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Fabrication of Field Emitter Arrays Using Si Delamination by Hydrogen Ion Implantation
- Fabrication of Microcantilever with a Silicon Tip Prepared by Anodization
- Field Emission from an Ion-Beam-Modified Polyimide Film
- A New Self-Aligned Process for Fabrication of Microemiter Arrays Using Selective Etching of Silicon
- Fabrication of Single-Crystal Si Microstructures by Anodization
- CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device
- Influence on Electrical Characteristic of Direct Au-Bumping on MOSFET
- Wafer-level Fabrication of Compliant Bump
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Measurement of Dynamic Strain during Ultrasonic Au-Bumping on Si Chip
- Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOI
- SOI-MOS/Diode Composite Photodetector Device
- New SOI-CBiCMOS with Merged Device Structure
- Reduction of the Floating-Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Characteristics of Thin-Film Transistors Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps
- Dynamic Strain and Chip Damage during Ultrasonic Flip Chip Bonding
- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
- Field Electron Emission from Inkjet-Printed Carbon Black
- Connection Test of Area Bump Using Active-Matrix Switches
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
- CMOS Application of Single-Grain Thin Film Transistor Produced Using Metal Imprint Technology
- SOI-MOSFET/Diode Composite Photodetection Device
- Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing
- Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET
- Cross-Hatch Related Oxidation and Its Impact on Performance of Strained-Si MOSFETs
- CMOS Application of Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
- Fabrication of a Gated Cold Cathode Using the Inkjet Embedding Method
- Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
- Behavior of Plated Microbumps during Ultrasonic Flip-Chip Bonding Determined from Dynamic Strain Measurement
- Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars
- Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
- Location Control of Si Thin-Film Grain Using Ni Imprint and Excimer Laser Annealing