Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOI
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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Nishisaka Mika
Center For Microelectronic Systems Kyushu Institute Of Technology
関連論文
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- Field Emission from an Jon Irradiated Photoresist
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- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
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- Variation of Photoluminescence Properties of Stain-Etched Si with Crystallinity of Starting Polycrystalline Si Films
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- Connection Test of Area Bump Using Active-Matrix Switches
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- A New Merged Bipolar-MOS Transistor in a Silicon on Insulator Structure
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- Fabrication of Field Emitter Arrays Using Si Delamination by Hydrogen Ion Implantation
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- Wafer-level Fabrication of Compliant Bump
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Measurement of Dynamic Strain during Ultrasonic Au-Bumping on Si Chip
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- SOI-MOS/Diode Composite Photodetector Device
- New SOI-CBiCMOS with Merged Device Structure
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- Characteristics of Thin-Film Transistors Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps
- Dynamic Strain and Chip Damage during Ultrasonic Flip Chip Bonding
- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
- Field Electron Emission from Inkjet-Printed Carbon Black
- Connection Test of Area Bump Using Active-Matrix Switches
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- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
- CMOS Application of Single-Grain Thin Film Transistor Produced Using Metal Imprint Technology
- SOI-MOSFET/Diode Composite Photodetection Device
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