Nishisaka Mika | Center For Microelectronic Systems Kyushu Institute Of Technology
スポンサーリンク
概要
関連著者
-
Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
-
Nishisaka Mika
Center For Microelectronic Systems Kyushu Institute Of Technology
-
MATSUMOTO Sumie
Center for Microelectronic Systems, Kyushu Institute of Technology
-
Watanabe Naoya
Center For Microelectronic Systems Kyushu Institute Of Technology
-
MAEDA Yasuhiro
Center for Microelectronic Systems, Kyushu Institute of Technology
-
NISHISAKA Mika
Center for Microelectronic Systems, Kyushu Institute of Technology
-
Kojima Takeaki
Center For Microelectronic Systems Kyushu Institute Of Technology
-
Nishisaka Mika
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
-
Hamasaki Yuichi
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
-
Shirata Osamu
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
-
Matsumoto Sumie
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
-
Kojima Takeaki
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
著作論文
- Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOI
- Reduction of the Floating-Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET
- Cross-Hatch Related Oxidation and Its Impact on Performance of Strained-Si MOSFETs
- CMOS Application of Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
- Schottky Source/Drain SOI MOSFET with Shallow Doped Extension