A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
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概要
- 論文の詳細を見る
We propose a metal oxide semiconductor field-effect transistor (MOSFET) whose channel size can be modified by applying control voltage. The variable-channel-size MOSFET (VS-MOS) has a control gate between the main gate and the source/drain. The control gate possesses a gap at its end in the active region. Owing to this unique layout, the VS-MOS achieves continuous modulation of effective channel size and can be fabricated using the conventional complementary MOS (CMOS) fabrication process. Results of test device fabrication show that the channel size modulation can be enhanced by employing the lightly doped drain (LDD) structure. It is also shown that the logic threshold can be controlled in a CMOS inverter composed of the VS-MOS.
- 2004-04-15
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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KOSASAYAMA Yasuhiro
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp.
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KIMATA Masafumi
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp.
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Ueno Masashi
Sensing Technology Department Advanced Technology R & D Center Mitsubishi Electric Corp.
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Arima Yutaka
Center For Microelectronic System Kyushu Institute Of Technology
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Nakanose Naoki
Center For Microelectronic Systems Kyushu Institute Of Technology
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Arima Yutaka
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Ueno Masashi
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Kimata Masafumi
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Kosasayama Yasuhiro
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nakanose Naoki
Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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