Side-Illuminated Color Photosensor
スポンサーリンク
概要
- 論文の詳細を見る
We have proposed a simple method for color imaging in which the photosensor is illuminated from the side. In this method, color imaging can be produced using single pixels and without generating false colors and moiré patterns. A 5.0 \times 5.0 mm<sup>2</sup>test chip was fabricated using a 0.35 μm complementary metal oxide semiconductor (CMOS) 1-poly 4-metal process. Because the side illumination method is used, the side of the test chip was etched using a high-speed deep reactive ion etching (D-RIE) process. Light illumination experiments confirmed that four colors --- blue, green, red, and near-infrared --- could be separated using this method. We also estimated the color separation properties of a similar sensor based on a 0.18 μm CMOS process.
- 2013-04-25
著者
-
Arima Yutaka
Center For Microelectronic System Kyushu Institute Of Technology
-
Baba Akiyoshi
Center For Microelectronic Systems Kyushu Institute Of Technology
-
Ariyoshi Tetsuya
Center for Microelectronic Systems, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
関連論文
- Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- Physical Random-Number Generator Using Schottky MOSFET
- Physical Random-Number Generator Using Schottky MOSFET
- Imprint Lithography Using Triple-Layer-Resist and Its Application to Metal-Oxide-Silicon Field-Effect-Transisor Fabrication
- Easy Release of Mold in Imprint Lithography Using Ion-Beam-Irradiated Photoresist Surface
- Fabrication of Carbon-Based Field Emitters Using Stamp Technology
- Field Emission from an Ion-Beam-Modified Polyimide Film
- Binocular Range Image Sensor LSI with Fully Parallel Stereo Correlation Processing
- Properties of Ink-Droplet Formation in Double-Gate Electrospray
- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
- Field Electron Emission from Inkjet-Printed Carbon Black
- Three-Dimensional Binocular Range Sensor Large Scale Integration with a 410 μs/Frame Output Time High-Speed Data Output Method
- Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- Side-Illuminated Color Photosensor
- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
- On-chip solar battery structure for CMOS LSI
- Fabrication of a Gated Cold Cathode Using the Inkjet Embedding Method
- Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
- Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars
- Binocular range-sensor LSI with improved distance detection precision by coordinated pixel placement