Improved Near-Infrared Sensitivity with a Side-Illuminated Photosensor
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概要
- 論文の詳細を見る
To improve the sensitivity of silicon photosensors to near-infrared light, we proposed a method in which the photosensor is illuminated from the side. That method allows the PN junction of the photodiode to be formed to a length that covers the entire depth of incident light penetration. The result is efficient collection of the photocharge produced by the injected light and improvement in quantum efficiency. We fabricated a 4.20 \times 3.33 mm2 test chip using a 0.35-μm complementary metal oxide semiconductor (CMOS) 1-poly 3-metal process. Because side illumination is used, the side of the chip is etched by high-speed deep reactive ion etching (D-RIE). For a 150-μm-long photodiode, the quantum efficiency to 970-nm wavelength near-infrared light is 28 times as high as for a conventional device. It was confirmed that the effectiveness of the proposed method increases with the wavelength of the incident light.
- 2012-02-25
著者
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Arima Yutaka
Center For Microelectronic System Kyushu Institute Of Technology
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Baba Akiyoshi
Center For Microelectronic Systems Kyushu Institute Of Technology
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Baba Akiyoshi
Center for Microelectronic Systems, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
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Arima Yutaka
Center for Microelectronic Systems, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
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Ariyoshi Tetsuya
Center for Microelectronic Systems, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
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Uryu Noriyuki
Fukuoka Industry, Science and Technology Foundation, Iizuka, Fukuoka 820-8502, Japan
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