Characteristics of Thin-Film Transistors Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps
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概要
- 論文の詳細を見る
Polycrystalline Si films were prepared on SiO_2 /Si substrates by solid-phase crystallization of vacuum-evaporated amorphous Si with a nucleation-controlled prcccess by steps formed at the substrate surface. Crystallinity of the Si films and characteristics of n- and p-channel thin-film transistors fabricated on the Si films have been investigated. The Si films were found to be composed of stripe-shaped grains elongated in the direction perpendicular to the step. The vast majority of the grains had the <111> axis in the direction perpendicular to the substrate surface. Concerning the in-plane crystal orientation, a tendency for the <211> axis to align in the direction perpendicular to the step was found. Both n- and p-channel transistors fabricated on the Si films showed improved channel carrier mobility compared to those fabricated on Si films prepared by solid-phase crystallization without nacleation control. The improvement was more pronounced in n-channel transistors, which suggested that p-channel transistor performances were less sensitive to grain boundaries.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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Asano T
Sony Shiroishi Semiconductor Inc. Miyagi‐ken Jpn
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Makihira Kenji
Center For Microelectronic Systems Kyushu Institute Of Technology
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TSUTAE Hiroomi
Center for Microelectronic Systems, Kyushu Institute of Technology
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Tsutae Hiroomi
Center For Microelectronic Systems Kyushu Institute Of Technology
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