A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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Asano T
Sony Corp. Tokyo Jpn
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NAKANOSE Naoki
Center for Microelectronic Systems, Kyushu Institute of Technology
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ARIMA Yutaka
Center for Microelectronic Systems, Kyushu Institute of Technology
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KOSASAYAMA Yasuhiro
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp.
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UENO Masashi
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp.
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KIMATA Masafumi
Sensing Technology Department, Advanced Technology R & D Center, Mitsubishi Electric Corp.
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