Influence on Electrical Characteristic of Direct Au-Bumping on MOSFET

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Asano Tanemasa

  Center For Microelectronic Systems Kyushu Institute Of Technology

• Watanabe Naoya

  Center For Microelectronic Systems Kyushu Institute Of Technology

関連論文

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• Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films
• Field Electron Emission from Inkjet-Printed Carbon Black
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• Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
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• Suppressing Plasma Induced Degradation of Gate Oxide by Using Silicon-On-Insulator Structures
• Reduction of Charge Build-up during Reactive Ion Etching by Using SOI Structures
• Variation of Photoluminescence Properties of Stain-Etched Si with Crystallinity of Starting Polycrystalline Si Films
• Ion Beam Modified Photoresist : A New Class of Field Emitter Material for Large Area Devices (Special Issue on Electronic Displays)
• Connection Test of Area Bump Using Active-Matrix Switches
• Connection Test of Area Bump Using Active-Matrix Switches
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• Measurement of Dynamic Strain during Ultrasonic Au Bump Formation on Si Chip
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• A New Merged Bipolar-MOS Transistor in a Silicon on Insulator Structure
• Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
• Microheater-Driven Dancing Microbubble
• Easy Release of Mold in Imprint Lithography Using Ion-Beam-Irradiated Photoresist Surface
• Fabrication of Carbon-Based Field Emitters Using Stamp Technology
• A New Merged BiMOS Transistor in an SOI Structure
• Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
• Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching
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• Control of Si Solid Phase Nucleation by Surface Steps for High-Performance Thin-Film Transistors
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• Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
• Fabrication of Field Emitter Arrays Using Si Delamination by Hydrogen Ion Implantation
• Fabrication of Microcantilever with a Silicon Tip Prepared by Anodization
• Field Emission from an Ion-Beam-Modified Polyimide Film
• A New Self-Aligned Process for Fabrication of Microemiter Arrays Using Selective Etching of Silicon
• Fabrication of Single-Crystal Si Microstructures by Anodization
• CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device
• Influence on Electrical Characteristic of Direct Au-Bumping on MOSFET
• Wafer-level Fabrication of Compliant Bump
• Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
• Measurement of Dynamic Strain during Ultrasonic Au-Bumping on Si Chip
• Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOI
• SOI-MOS/Diode Composite Photodetector Device
• New SOI-CBiCMOS with Merged Device Structure
• Reduction of the Floating-Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
• Characteristics of Thin-Film Transistors Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps
• Dynamic Strain and Chip Damage during Ultrasonic Flip Chip Bonding
• Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
• Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
• Field Electron Emission from Inkjet-Printed Carbon Black
• Connection Test of Area Bump Using Active-Matrix Switches
• Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
• A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
• CMOS Application of Single-Grain Thin Film Transistor Produced Using Metal Imprint Technology
• SOI-MOSFET/Diode Composite Photodetection Device
• Location and Orientation Control of Si Grain by Combining Metal-Induced Lateral Crystallization and Excimer Laser Annealing
• Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET
• Cross-Hatch Related Oxidation and Its Impact on Performance of Strained-Si MOSFETs
• CMOS Application of Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
• Fabrication of a Gated Cold Cathode Using the Inkjet Embedding Method
• Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
• Behavior of Plated Microbumps during Ultrasonic Flip-Chip Bonding Determined from Dynamic Strain Measurement
• Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars
• Schottky Source/Drain SOI MOSFET with Shallow Doped Extension
• Location Control of Si Thin-Film Grain Using Ni Imprint and Excimer Laser Annealing

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