CMOS Application of Single-Grain Thin Film Transistor Produced Using Metal Imprint Technology
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Asano T
Center For Microelectronic Systems Kyushu Institute Of Technology
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Asano Tanemasa
Center For Microelectronic Systems Kyushu Institute Of Technology
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MAKIHIRA Kenji
Center for Microelectronic Systems, Kyushu Institute of Technology
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YOSHII Masahito
Center for Microelectronic Systems, Kyushu Institute of Technology
関連論文
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- SOI-MOSFET/Diode Composite Photodetection Device
- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
- Fabrication of Micro Field Emitter Tip Using Ion-Beam Irradiation-Induced Self-Standing of Thin Films
- Field Electron Emission from Inkjet-Printed Carbon Black
- Increased Emission Efficiency of Gated Cold Cathode with Carbonic Nano-Pillars
- Micro Field Emitter with Nano-Pillarets Formed by Reactive Ion Etching of Photoresist
- Suppressing Plasma Induced Degradation of Gate Oxide Using Silicon-on-Insulator Structures
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- Variation of Photoluminescence Properties of Stain-Etched Si with Crystallinity of Starting Polycrystalline Si Films
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- Connection Test of Area Bump Using Active-Matrix Switches
- Connection Test of Area Bump Using Active-Matrix Switches
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- Influence of Direct Au-Bump Formation on Metal Oxide Semiconductor Field Effect Transistor
- Behavior of Plated Microbumps during Ultrasonic Flip-Chip Bounding Determined from Dynamic Strain Measurement
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- Microheater-Driven Dancing Microbubble
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- Fabrication of Carbon-Based Field Emitters Using Stamp Technology
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- Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Fabrication of Field Emitter Arrays Using Si Delamination by Hydrogen Ion Implantation
- Fabrication of Microcantilever with a Silicon Tip Prepared by Anodization
- Field Emission from an Ion-Beam-Modified Polyimide Film
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- Fabrication of Single-Crystal Si Microstructures by Anodization
- CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device
- Influence on Electrical Characteristic of Direct Au-Bumping on MOSFET
- Wafer-level Fabrication of Compliant Bump
- Pyramid Bumps for Fine-Pitch Chip-Stack Interconnection
- Measurement of Dynamic Strain during Ultrasonic Au-Bumping on Si Chip
- Application of Microwave Plasma Gate Oxidation to Strained-Si on SiGe and SGOI
- SOI-MOS/Diode Composite Photodetector Device
- New SOI-CBiCMOS with Merged Device Structure
- Reduction of the Floating-Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- Characteristics of Thin-Film Transistors Fabricated on Nucleation-Controlled Poly-Si Films by Surface Steps
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- Electrostatic Inkjet Patterning Using Si Needle Prepared by Anodization
- Electrostatic Droplet Ejection Using Planar Needle Inkjet Head
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- Connection Test of Area Bump Using Active-Matrix Switches
- Low-Voltage-Signaling CMOS Receiver with Dynamic Threshold Control
- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure
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