Cross Sectional Shape Dependence of Quantum Wire Band Structures and Optical Matrix Elements

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概要

• 論文の詳細を見る

• The tight binding method is used to analyze the band structures and the optical matrix elements of GaAs/Al_xGa_<1-x>As quantum wires which have triangular and square cross sections, focusing on a comparison of the polarization dependences. The results show that, in the triangular-shaped quantum wire, the decreased symmetry enhances the non-parabolicity in the E-k dispersion curve, which results in a decrease of the magnitude of important optical transitions as compared with those of the square-shaped quantum wire. This property of the triangular-shaped quantum wire leads to a significant difference in the polarization dependence of the optical transitions between the two types of quantum wires. These results demonstrate the importance of considering the influence of the cross sectional shape in the design of quantum wire devices, especially when comparing high and low symmetry cross sections.

• 社団法人応用物理学会の論文
• 1993-11-01

著者

• Tanaka Takuji

  Institute Of Industrial Science University Of Tokyo

• Yamauchi Tadaaki

  Institute Of Industrial Science University Of Tokyo

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics And Institute Of Industrial Science The Universit

• SCHULMAN Joel

  Institute of Industrial Science, University of Tokyo

• Schulman Joel

  Institute Of Industrial Science University Of Tokyo

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo

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