Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
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概要
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Photoluminescence excitation spectroscopy is performed on a single GaN quantum dot embedded in a core shell type GaN/AlGaN nanowire. The temperature dependence of the photoluminescence excitation spectrum is presented, revealing the expected temperature dependent shift in both the exciton ground and excited states. The states are further characterised by comparison to 8-band k\cdot p calculations.
- 2013-08-25
著者
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Kako Satoshi
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Arita Munetaka
Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Holmes Mark
Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Podemski Pawel
Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Choi Kihyun
Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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