Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
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概要
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We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal–oxide–semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.
- 2009-06-25
著者
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Kodera Tetsuo
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Nakaoka Toshihiro
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Williams David
Hitachi Cambridge Laboratory Cavendish Laboratory
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Ferrus Thierry
Hitachi Cambridge Laboratory, J.J. Thompson Avenue, Cambridge CB3 0HE, United Kingdom
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Williams David
Hitachi Cambridge Laboratory, J.J. Thompson Avenue, Cambridge CB3 0HE, United Kingdom
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Podd Gareth
Hitachi Cambridge Laboratory, J.J. Thompson Avenue, Cambridge CB3 0HE, United Kingdom
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Tanner Michael
Hitachi Cambridge Laboratory, J.J. Thompson Avenue, Cambridge CB3 0HE, United Kingdom
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Arakawa Yasuhiko
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Kodera Tetsuo
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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