Anisotropic Exciton Rabi Oscillation in Single Telecommunication-Band Quantum Dot
スポンサーリンク
概要
- 論文の詳細を見る
Anisotropic Rabi oscillation in the exciton state in a single InAs/GaAs quantum dot (QD) was demonstrated in the telecommunication-band by selecting two orthogonal polarization angles of the excitation laser. Our InAs QDs were embedded in an intrinsic layer of an n–i–Schottky diode, which provides an electric field to extract photoexcited carriers from QDs. Owing to the potential anisotropy of QDs, the fine structure splitting (FSS) energy in the exciton state in single InAs QDs was ${\sim}110$ μeV, measured by polarization-resolved photocurrent spectroscopy. The ratio between two different Rabi frequencies, which reflect anisotropic dipole moments of two orthogonal exciton states, was estimated to be ${\sim}1.2$. This demonstrates that the selective control of two orthogonal polarized exciton states is a promising technique for exciton-based-quantum information devices compatible with fiber optics.
- 2010-06-25
著者
-
Watanabe Katsuyuki
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Nakaoka Toshihiro
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Miyazawa Toshiyuki
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Yasuhiko Arakawa
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Toshiyuki Miyazawa
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Naoto Kumagai
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Naoki Yokoyama
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Toshihiro Nakaoka
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
-
Katsuyuki Watanabe
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
関連論文
- First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
- Single-photon generator for telecom applications
- Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature
- Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Observation of Light Emission at-1.5μm from InAs Quantum Dots in Photonic Crystal Microcavity
- Enhanced Optical Properties of High-Density (>10^/cm^2) InAs/AlAs Quantum Dots by Hydrogen Passivation
- Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
- InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
- Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
- Architecture Evaluation Based on the Datapath Structure and Parallel Constraint (Special Section on VLSI Design and CAD Algorithms)
- Tunneling-Injection Single-Photon Emitter Using Charged Exciton State
- Anisotropic Exciton Rabi Oscillation in Single Telecommunication-Band Quantum Dot
- Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- High-Temperature 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding