High-Temperature 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding
スポンサーリンク
概要
- 論文の詳細を見る
We present 1.3 μm InAs/GaAs quantum dot lasers on Si substrates operating at high temperatures. Our lasers are fabricated through epitaxial growth on GaAs substrates of the InAs/GaAs quantum dot laser double heterostructure, and subsequent GaAs/Si wafer bonding and layer transfer onto Si substrates. Both of the on-Si lasers by direct- and metal-mediated bonding exhibit lasing temperatures over 100 °C. Partial p-type doping in the InAs/GaAs quantum dot core layer is found to significantly increase the characteristics temperature T_{0}. This result verifies the suitability of III--V quantum dot lasers as a light source in Si photonic integrated circuits.
- 2013-08-25
著者
-
Watanabe Katsuyuki
Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
-
Watanabe Katsuyuki
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
-
Tanabe Katsuaki
Institute for Nano Quantum Information Electronics, University of Tokyo, Meguro, Tokyo 153-8505, Japan
-
Rae Timothy
Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan
-
Arakawa Yasuhiko
Institute for Nano Quantum Information Electronics, University of Tokyo, Meguro, Tokyo 153-8505, Japan
-
Tanabe Katsuaki
Institute for Nano Quantum Information Electronics and Institute of Industrial Science, University of Tokyo
関連論文
- Esaki diodes live and learn
- Photonic Crystal Nanocavity Continuous-wave Laser Operation at Room Temperature
- Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy
- Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
- Vertical Microcavity Lasers with InGaAs/GaAs Quantum Dots Formed by Spinodal Phase Separation
- Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition
- Light Emission from Individual Self-Assembled InAs/GaAs Quantum Dots Excited by Tunneling Current Injection
- Formation of InGaAs Quantum Dots on GaAs Multi-Atomic Steps by Metalorganic Chemical Vapor Deposition Growth
- Defect Modes in Two-Dimensional Triamgular Photonic Crystals
- Lasing Emission from an In_Ga_N Vertical Cavity Surface Emitting Laser
- Phototransistors Using Point Contact Structures
- Phototransistors Using Point Contact Structures
- Tarahertz Emission from Quantum Beats in Coupled Quantum Wells
- Terahertz Emission from Quantum Beats in Coupled Quantum Wells
- Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot-Nanocavity System
- Below-Gap Spectroscopy of Undoped GaAs/AlGaAs Quantum Wells by Two-Wavelength Excited Photoluminescene
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Fabrication of InGaAs Strained Quantum Wire Structures Using Selective-Area Metal-Organic Chemical Vapor Deposition Growth
- Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
- Large Vacuum Rabi Splitting in Single Self-Assembled Quantum Dot-Nanocavity System
- Fabrication of Single-Electron Transistor Composed of a Self-Assembled Quantum Dot and Nanogap Electrode by Atomic Force Microscope Local Oxidation
- Lifetime of Confined LO Phonons in Quantum Dots and Its Impact on Phonon Bottleneck Issue
- Growth Condition Dependence of the Photoluminescence Properties of In_xGa_N/In_yGa_N Multiple Quantum Wells Grown by MOCVD
- Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode
- High-Frequency Organic Complementary Ring Oscillator Operating up to 200kHz
- Cross Sectional Shape Dependence of Quantum Wire Band Structures and Optical Matrix Elements
- Lasing Oscillation of Vertical Microcavity Quantum Dot Lasers
- Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)
- Localization of Photons in Two-Dimensional Triangular Lattices with Periodic Defects
- Tunneling-Injection Single-Photon Emitter Using Charged Exciton State
- Anisotropic Exciton Rabi Oscillation in Single Telecommunication-Band Quantum Dot
- Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
- Novel Solution Process for High-Mobility C_ Fullerene Field-Effect Transistors
- Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots Using In situ Patterning
- Solution-Processed C Single-Crystal Field-Effect Transistors (Special Issue : Applied Physics on Materials Research)
- Solvent Dependence of Vacuum-Dried C60 Thin-Film Transistors
- Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructures
- Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots
- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Direct Observation of Electron Jet from a Point Contact
- Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
- Internal Strain of Self-Assembled InxGa1-xAs Quantum Dots Calculated to Realize Transverse-Magnetic-Mode-Sensitive Interband Optical Transition at Wavelengths of 1.5 μm bands
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
- Si Waveguide-Integrated Metal--Semiconductor--Metal and p--i--n-Type Ge Photodiodes Using Si-Capping Layer
- Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes
- Electro-Mechanical Q Factor Control of Photonic Crystal Nanobeam Cavity
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
- Resonant-Wavelength Control in Visible-Light Range of Organic Photonic Crystal Nanocavities
- Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
- High-Temperature 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding
- Optical Control of Transmittance by Photo-Induced Absorption Effect in InGaN/GaN Structures
- Microphotoluminescence Intensity Images of InGaN Single Quantum Wells
- Advances in High-Density Inter-Chip Interconnects with Photonic Wiring
- Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes (Special Issue : Solid State Devices and Materials)
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot : Gating and Charge Sensing (Special Issue : Solid State Devices and Materials)
- Novel III-V/Si hybrid laser structures with current injection across conductive wafer-bonded heterointerfaces: A proposal and analysis
- C-3-17 Observation of spontaneous Raman scattering in silicon grating waveguides
- Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires
- Fabrication of AlGaN Two-Dimensional Photonic Crystal Nanocavities by Selective Thermal Decomposition of GaN
- Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots