Optical Control of Transmittance by Photo-Induced Absorption Effect in InGaN/GaN Structures

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概要

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• We have investigated the optical modulation properties of transmittance using the photo-induced absorption effect in 10 periods of In0.10Ga0.90N/GaN (60 nm/60 nm) structures grown by metal-organic chemical vapor deposition. Transmittance was modulated by 22% at 398 nm under a continuous-wave laser pumping at 405 nm with an intensity of 1 W/cm2. We have also investigated the influences of He+ ion irradiation on optical modulation properties, such as magnitude, time response, and spatial resolution. The modulation of transmittance reduces at a high pump on/off frequency mainly due to the relatively slow recovery process. The ion-irradiated samples showed a faster recovery and this resulted in the enhancement of the cutoff frequency from 30 to 130 kHz at 1 W/cm2. The irradiation process also improved the spatial resolution at the expense of the magnitude of transmittance modulation. However, the spatial resolution of the device is of the order of 100 μm; thus, substantial improvement is essential for two-dimensional optical device applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Shimura Tsutomu

  Institute Of Industrial Science University Of Tokyo

• Nomura Masahiro

  Institute For Nano Quantum Information Electronics University Of Tokyo

• Kuroda Kazuo

  Institute Of Industrial Science Umversity Of Tokyo

• Arakawa Yasuhiko

  Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo

• Nomura Masahiro

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

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