Radiation Effect due to Energetic Oxygen Atoms on Conductive Al-Doped ZnO Films : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
Al-doped ZnO films were prepared by both RF planar magnetron and RF diode sputterings. The dependence of the ZnO film resistivity on both substrate position and Ar gas pressure was investigated. Energetic oxygen atoms (O atoms) bombarding the film were also observed by time-of-flight apparatus, and the correlation between the film resistivity and the film bombardment by the energetic O atoms was examined. The following results were obtained: When the bombardment of energetic O atoms on Al-doped ZnO films became significant at the substrate positions facing the eroded area of the target, the film resistivity increased at the same positions. Then, both the carrier concentration and Hall mobility of the Al-doped ZnO films were decreased, which was thought to be due to the film bombardment by the energetic O atoms.
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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Kuroda Kenji
Faculty Of Engineering The University Of Tokushima
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Tominaga Koji
Atr Optical And Radio Communications Research Laboratories:(present Address) Sanyo Electric Co. Ltd.
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Tominaga Koji
Department Of Industrial Chemistry Faculty Of Engineering Chubu University
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Tominaga Koji
Semiconductor Research Center Sanyo Electric Co. Ltd.
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Kuroda K
Central Research Laboratory Hitachi Ltd.
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Tada O
Faculty Of Engineering The University Of Tokushima
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Tada Osamu
Faculty Of Engineering Tokushima University
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Tada Osamu
Department Of Biology Tokyo University Of Science
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Kuroda K
International Superconductivity And Technol. Center (istec) Tokyo Jpn
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Tominaga K
Kobe Univ. Kobe Jpn
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Tominaga Kikuo
Faculty Of Engineering The University Of Tokushima
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Kuroda Kazuo
Institute Of Industrial Science Umversity Of Tokyo
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