The Effect of Short-Wavelength Light in Ge Film Obliquely Deposited in Vacuum
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1967-04-15
著者
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Tada Osamu
Faculty Of Engineering Tokushima University
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TAKAHASHI Masaru
Faculty of Engineering, Tokushima University
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KOU Fukuzen
Faculty of Engineering, Tokushima University
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Takahashi Masaru
Faculty Of Engineering Tokushima University
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Kou Fukuzen
Faculty Of Engineering Tokushima University:(present Address) Japan Vacuum Engineering Co. Ltd.
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Takahashi Masaru
Faculty Of Engineering Osaka University
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- Mean Free Path of Energetic Oxygen Atoms in the Sputtering of ZnO
- High-Energy Particles in AIN Film Preparation by Reactive Sputtering Technique
- Influence of Bombardment by Energetic Atoms on c-Axis Orientation of ZnO Films
- Energy Analysis of High-Energy Neutral Atoms in the Sputtering of ZnO and BaTiO_3
- High-Energy Neutral Atoms in the Sputtering of ZnO
- Pb(Zr・Ti)O_3 Films by RF Sputtering in PbO Vapour
- Time-of-Flight Measurement of Particles in SiO_2 Sputtering
- Behaviours of High-Energy Electrons and Neutral Atoms in the Sputtering of BaTiO_3
- Growth of BaTiO_3 Crystals by Floating Zone Technique
- The Photovoltaic Polarity of Ge Films Obliquely Deposited in Vacuum
- Radiation Effect due to Energetic Oxygen Atoms on Conductive Al-Doped ZnO Films : Surfaces, Interfaces and Films
- The Mechanism of Photovoltaic Effect of Ge Film Obliquely Deposited in Vacuum
- The Effect of Short-Wavelength Light in Ge Film Obliquely Deposited in Vacuum
- The Photovoltaic Effect of Ge Films at Low Temperatures
- Spectral Sensitivity of Photovoltaic Effect of Ge Film Obliquely Deposited in Vacuum
- The Photovoltaic Polarity of Ge Films Obliquely Deposited in Vacuum