The Photovoltaic Effect of Ge Films at Low Temperatures
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概要
- 論文の詳細を見る
Ge is deposited onto a glass substrate with an oblique deposition angle of 45゜. Photovoltage and resistance of films are measured at 5×10^<-7>-1×10^<-6> Torr in the range from room temperature to the vicinity of liquid nitrogen one. A light passing through a glass filter is used as a light source. A film which is not exposed to air and one exposed to air are employed for the measurement. The magnitude of photovoltage increases anomalously at low temperatures. The increase of photovoltage at low temperatures is studied as a relation between photovoltage and resistance.
- 社団法人応用物理学会の論文
- 1972-04-05
著者
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Tada Osamu
Faculty Of Engineering Tokushima University
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Onishi Hideomi
Faculty Of Engineering Ehime University
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TAKAHASHI Masaru
Faculty of Engineering, Tokushima University
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Takahashi Masaru
Faculty Of Engineering Tokushima University
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Takahashi Masaru
Faculty Of Engineering Osaka University
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