Influence of Target Shape on Properties of AlN Sputtered Film
スポンサーリンク
概要
- 論文の詳細を見る
AlN films were deposited by reactive magnetron sputtering with a roof-shaped Al target and conventional planar target. The c-axis orientation and the grain growth of AlN films were improved and the defects in the film were decreased, when the ion flux bombarding the film decreased. This trend was confirmed by depositing AlN films under various N2 gas pressures or external magnetic fields. These data indicate that there remains a considerable influence of ion bombardment in conventional planar magnetron sputtering, but the use of a rooftype target is effective for decreasing the exposure of the film to plasma as a result of a decrease in ion bombardment.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-09-30
著者
-
MORI Ichiro
Faculty of Engineering, The University of Tokushima
-
TOMINAGA Kikuo
Faculty of Engineering, The University of Tokushima
-
KUSAKA Kazuya
Faculty of Engineering, The University of Tokushima
-
HANABUSA Takao
Faculty of Engineering, The University of Tokushima
-
Mori I
Faculty Of Engineering The University Of Tokushima
-
Kusaka Kazuya
Department Of Mechanical Engineering Tokushima University
-
Hanabusa Takao
Faculty Of Engineering Tokushima University
-
Tominaga Kikuo
Dept. Of Electrical And Electronic Engineering Tokushima Univ.
-
Tominaga Kikuo
Faculty Of Engineering The University Of Tokushima
-
Sato Yoshifumi
Faculty Of Engineering The University Of Tokushima
-
Mori Ichiro
Faculty Of Engineering Osaka University
-
Saitoh Yoshifumi
Faculty of Engineering, the University of Tokushima
関連論文
- Calculation of Incident Angle Dependence of Ion-Induced Kinetic Electron Emission from Aluminum
- Direct Monte Carlo Simulation of Incident-Angle Dependence of Secondary Electron Emission from Aluminum
- A Monte Carlo Simulation of Ion-Induced Kinetic Electron Emission with a Stochastic Excitation of Electrons in Solids
- Elastic Scattering Cross Sections of Low-Energy Electron in Solids
- Influence of Recoiling Target Atoms on Kinetic Electron Emission from Molybdenum under keV Ion Bombardments
- Incident Angle Dependence of Secondary Electron Emission from Copper with Multiple Elastic Scattering of Primary Electron in the Muffin-Tin Potential
- Monte Carlo Study of Dependence of Secondary Electron Emission from Copper on Incident Angle of keV Primary Electrons
- Deviation from a Poisson Distribution of Proton-Induced Kinetic Electron Emission Statistics from Gold
- A Semiempirical Monte Carlo Approach to Secondary Electron Emission from a Hydrogen-Implanted Carbon Surface
- Influence of Wall Material on Charge-Exchange Neutral Emission from High-Temperature Hydrogen Plasma
- Secondary Electron Emission from a Hydrogen-Implanted Graphite by Low-Energy Electron Impact
- Film Degradation in AlN Preparation by Facing Target System ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Prebake Effects in Chemical Amplification Electron-Beam Resist : Resist and Processes
- Prebake Effects in Chemical Amplification Electron-Beam Resist
- Energetic Oxygen Atoms in RF Sputtering of ZnO : T: Thin Film
- High-Energy Oxygen Atoms in ZnO Film Preparation by Reactive Sputtering of Zn : T: Thin Film
- Influence of Energetic Oxygen Bombardment on Conductive ZnO Films
- Energy Distribution of Energetic Oxygen Atoms in the Sputtering of ZnO
- Mean Free Path of Energetic Oxygen Atoms in the Sputtering of ZnO
- X-RAY MEASUREMENT OF STRESSES IN DEPOSITED THIN FILM WITH FIBER TEXTURE
- High-Energy Particles in AIN Film Preparation by Reactive Sputtering Technique
- Influence of Bombardment by Energetic Atoms on c-Axis Orientation of ZnO Films
- Energy Analysis of High-Energy Neutral Atoms in the Sputtering of ZnO and BaTiO_3
- High-Energy Neutral Atoms in the Sputtering of ZnO
- AIN Film Preparation on Glass by Sputtering System with Facing Targets : T: THIN FILM
- Influence of Energetic Particles on ZnO Films in the Preparation by Planar Magnetron Sputtering with Obliquely Facing Targets
- Damage in ZnO Film Preparation by Planar Magnetron Sputtering System with Obliquely Facing Targets of Zn
- AlN Sputtered Film Properties Prepared at Low Gas Pressures by Facing Target System
- Time-of-Flight Measurement of Particles in SiO_2 Sputtering
- Evaluation of Internal Stresses in Single-, Double- and Multi-Layered TiN and TiAIN Thin Films by Synchrotron Radiation(Advanced Technology of Experimental Mechanics)
- OS4(P)-16(OS04W0240) Measurement of Residual Stress in Nano-Size Copper Thin Films by Synchrotron Radiation
- OS4(P)-13(OS04W0205) Evaluation of Residual Stress in TiN Thin Films Deposited by Arc-Ion-Plating with Synchrotron Radiation
- OS4(5)-22(OS04W0203) Evaluation of Internal Stresses in Single-, Double- and Multi-Layered TiN and TiAlN Thin Films by Synchrotron Radiation
- Evidence for Ferromagnetic Fluctuations in Filled Skutterudite LaFe_4Sb_:Sb-NQR and La-NMR(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- X-Ray Stress Measurement and Mechanical Properties of TiN Films Coated on Aluminum and Aluminum Alloy Substrates by Arc Ion Plating and Ion Beam Mixing
- Influence of Target Shape on Properties of AlN Sputtered Film
- OS4(4)-18(OS04W0210) X-Ray and Neutron Diffraction Measurements of Residual Stresses in Cr, CrN and CrN on Cr Interlayer Films Deposited by Arc-Ion-Plating
- Gas Pressure Dependence of AIN Film Properties in Alternating Sputtering System
- OS4(P)-15(OS04W0237) Residual Stress of Cu/TiN Films Deposited by Ion Plating and RF Sputtering
- OS4(P)-14(OS04W0209) Characteristic Evaluation of ZrO_2 Film Deposited by DC Magnetron Sputtering
- OS4(1)-2(OS04W0204) Effect of Powder Target on Crystal Orientation and Residual Stress in Sputtered GaN Film
- Effect of Plasma Protection Net on Crystal Orientation and Residual Stress in Sputtered Gallium Nitride Films(Materials Evaluation by X-ray and Neutron Diffractions)
- Radiation Effect due to Energetic Oxygen Atoms on Conductive Al-Doped ZnO Films : Surfaces, Interfaces and Films
- CHANGE IN RESIDUAL STRESSES OF TiN FILMS DUE TO ANNEALING TREATMENTS
- Residual Stress and In-situ Thermal Stress Measurements of Copper Films on Glass Substrate
- Anisotropy of Elastic Scattering of Low-Energy Electrons in Noble Gases
- Statistical Behavior of Secondary Electron Emission from Copper by Obliquely Incident Electrons at keV Energies
- Elastic Cross Section for Low-Energy-Proton Scattering in Copper with the Method of Partial Waves
- Differential Cross-Section and Mean Free Path for the Elastic Scattering of Low-Energy Protons in solids Using the Partial-Wave Method
- Stopping Power of Plasma in a Beam-Plasma System
- Statistics of Secondary Electron Emission for Low-Energy Electron Impact on Copper
- Statistics of Kinetic Secondary Electron Emission with Stochastic Elastic Collision of Ions in Solids
- Synergy Effect of Particle Radiation and Ultraviolet Radiation from Capacitively Coupled Radio Frequency Argon Plasmas on n-GaN Etching Damage
- Potential Distribution in a Magnetized Cold Plasma
- Charge Exchange Loss of High Temperature Plasma Confined by Mirror Magnetic Field
- Influence of Backscattered Particles on Angular Dependence of Secondary Electron Emission From Copper
- Ambipolar Potential in Magneto-Active Cold Plasma
- A Semiempirical Calculation of Ion-Induced Kinetic Electron Emission Statistics
- Deviation from an Inverse Cosine Dependence of Kinetic Secondary Electron Emission for Angle of Incidence at keV Energy
- A Study of a Surface-Type Positive-Ion-Neutral Converter with Oblique Incidence