CHANGE IN RESIDUAL STRESSES OF TiN FILMS DUE TO ANNEALING TREATMENTS

概要

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The structure and residual stresses of TiN films deposited on a steel substrate were investigated by X-ray diffraction. TiN films approximately 4 μm thick were deposited on one side of the substrate by thermal chemical vapor deposition(TiN_CVD film). The TiN_CDV film exhibited high {100} orientation. The two-exposure method was used to evaluate residual stresses in the TiN films by measuring lattice strains in the directions determined by the crystal orientation of the film. The TiN_CVD films had the compressive residual stress of -1.8 GPa, which is as large as the thermal residual stress expected from a thermal strain mismatch between the film and the substrate. The residual stresses did not change by annealing at temperatures below 1073 K, but they increased with increasing annealing temperatures above 1073 K, almost along with the thermal residual stresses. By X-ray photoelectron spectroscopy(XPS), we determined the ratio of nitrogen to titanium(N/Ti)after the annealing treatments. The results of the XPS analysis showed that the initial value of N/Ti was about 1.08 in the as-deposited TiN films and that the ratio of N/Ti did not change after annealing at temperatures below 1073 K, but decreased to 1.00 after annealing at temperatures above 1073 K.
社団法人日本材料学会の論文
1999-03-15