Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots
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概要
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We report on the photoluminescence excitation spectroscopy of single GaN/AlN quantum dots. Until now, this technique has not been successfully implemented on single quantum dots in the near and middle UV spectral regions. The experiment, performed with a developed UV microphotoluminescence excitation spectroscopy system, reveals a resonant absorption into a quantum dot excited state and a continuum of states below the wetting layer ground state. The observations are supported by multiband k\cdot p calculations performed for a single GaN/AlN quantum dot with realistic geometry, including the strain distribution and the effect of the internal electric field.
- 2013-01-25
著者
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Kako Satoshi
Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Arita Munetaka
Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Holmes Mark
Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Podemski Paweł
Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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ARITA Munetaka
Institute for Nano Quantum Information Electronics, The University of Tokyo
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KAKO Satoshi
Institute for Nano Quantum Information Electronics, The University of Tokyo
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HOLMES Mark
Institute for Nano Quantum Information Electronics, The University of Tokyo
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