Growth and Optical Properties of Self-Assembled Quantum Dots for Semiconductor Lasers with Confined Electrons and Photons (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)

概要

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We discuss fabrication of InGaAs quantum dot structures using the self-assembling growth technique with the StranskiiKrastanow growth mode in MOCVD, including optical properties of the nano-structures. The formation process of the quantum dot islands was clarified by observing the samples grown under various conditions with an atomic force microscope. A trial for self-alignment of the quantum dots was also investigated. On the basis of these results, as the first step toward the ultimate semiconductor lasers in which both electrons and photons are fully quantized, a vertical microcavity InGaAs/GaAs quantum dot laser was demonstrated. Finally a perspective of the quantum dot lasers is discussed, including the bottle-neck issues and the impact of the quantum dot structures for reducing threshold current in wide bandgap lasers such as GaN lasers.
社団法人電子情報通信学会の論文
1996-11-25