Coulomb Blockade and Disorder in 2D Quantum Dot Arrays

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概要

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• We investigate the influence of both size disorder and background charge disorder, on the Coulomb blockade voltage of two-dimensional arrays of metallic quantum dots for varying array size. Both the mean blockade voltage and its variation are considered for several array sizes with varying degrees of disorder. Design rules for devices using those arrays are derived.

• 社団法人応用物理学会の論文
• 2000-07-15

著者

• MIZUTA Hiroshi

  Hitachi Cambridge Laboratory

• Mizuta Hiroshi

  Hitachi Cambridge Laboratory Cavendish Laboratory

• MULLER Heinz-Olaf

  Hitachi Cambridge Laboratory, Cavendish Laboratory

• MILLIAMS David

  Hitachi Cambridge Laboratory, Cavendish Laboratory

• Muller Heinz-olaf

  Hitachi Cambridge Laboratory Cavendish Laboratory

• Muller Heinz-olaf

  Hitachi Cambridge Laboratory

• Milliams David

  Hitachi Cambridge Laboratory Cavendish Laboratory

• Williams David

  Hitachi Cambridge Laboratory Cavendish Laboratory

関連論文

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• Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter
• Single Electron Charging Phenomena in Silicon Nano-Pillars With and Without Silicon Nitride Tunnel Barriers
• Coulomb Blockade and Disorder in 2D Quantum Dot Arrays
• Strategy for Off-Current Suppression in Thin-Film Transistors
• Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
• Modelling of Structural and Threshold Voltage Characteristics of Randomly Doped Silicon Nanowires in the Coulomb-Blockade Regime : Semiconductors

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