Growth and Electronic Properties of Self-Organized Quantum Rings
スポンサーリンク
概要
- 論文の詳細を見る
A method is described which can be used to grow self-organized, nanoscopic InGaAs ring structures on GaAs substrate. Starting from self-organized InAs dots, the crucial step for the ring formation is a short annealing phase after the dots have been covered by a thin GaAs layer. Spectroscopic data are reviewed which show that the ring morphology can be preserved even after the InGaAs islands have been covered by additional cladding layers for the realization of electronically or optically active devices.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
-
Petroff Pierre
Materiais And Electrical And Computer Engineering University Of Callfornia
-
Garcia Jorge
Materials Department And Quest University Of California
-
Garcia Jorge
Materials Department and QUEST, University of California, Santa Barbara, CA 93106, USA
-
Lorke Axel
Laboratorium für Festkörperphysik, Gerhard-Mercator-Universität, Lotharstr. 17-ME 245, 47048 Duisburg, Germany
-
Luyken R.Johannes
Sektion Physik und CeNS, LMU München, Geschwister-Scholl-Platz 1, 80539 München, Germany
-
Petroff Pierre
Materials Department and QUEST, University of California, Santa Barbara, CA 93106, USA
-
Luyken R.
Sektion Physik und CeNS, LMU München, Geschwister-Scholl-Platz 1, 80539 München, Germany
関連論文
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots ( Quantum Dot Structures)
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Optical Up-Conversion Processes in InAs Quantum Dots
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy