Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-03-15

著者

• Sakaki H

  Univ. Tokyo Tokyo Jpn

• Yutaka Kadoya

  Department Of Quantum Matter Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Kadoya Yutaka

  Department Of Quantum Matter Adsm Hiroshima University

• NAKAMURA Yusui

  RCAST, University of Tokyo

• SAKAKI Hiroyuki

  RCAST, University of Tokyo

• Nakamura Yusui

  Rcast University Of Tokyo:quantum Transition Project Jrdc:quantum Wave Project Jrdc

• YAMAUCHI Miyuki

  RCAST, University of Tokyo

• KADOYA Yutaka

  RCAST, University of Tokyo

• SUGAWARA Hiroharu

  RCAST, University of Tokyo

• Yamauchi Miyuki

  Rcast University Of Tokyo:mathematical Systems Institute Inc.

関連論文

• THz Electromagnetic Wave Radiation from Bulk Semiconductor Microcavities Excited by Short Laser Pulses : Optics and Quantum Electronics
• Fractional Quantum Hall Effect at ν=1/7
• Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
• Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
• Phototransistors Using Point Contact Structures
• Phototransistors Using Point Contact Structures
• Molecular Beam Epitaxial Growth of InGaAs Quantum Welts on (110) GaAs Surfaces
• Effect of Intense Intersubband Optical Excitation on the Electron Distribution in GaAs/AlAs Quantum Wells
• Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System
• Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy
• Formation of Two-Dimensional Electron Gas in N-AlGaAs/GaAs Heterojunctions on (111)B Microfacets Grown by Molecular Beam Epitaxy on a Patterned (001) Substrate
• Possible Polaron Effect in Complex Terahertz Conductivity of Electron-Doped Nanoporous Crystal 12CaO・7Al_2O_3(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Electronic States in Edge Quantum Wires on GaAs/AlGaAs Facet Structures
• Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
• Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
• Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
• Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
• Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
• One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
• Evaluation of Carrier Dynamics in n-Al_xGa_As Films by Terahertz Time-Domain Spectroscopy with Characteristic-Matrix Analysis
• Generation of Heralded Twin-Photons in a Series-Coupled Mesoscopic Light-Emitting Diode System
• Photon-Number Squeezing in a Light-Emitting Diode Driven by a Constant-Voltage Source : Pump Regulation by the Non-Coulombic Effect
• Effect of Ionized Impurities at Heterointerface on Concentration and Mobility of Two-Dimensional Electrons in Selectively Doped Heterojunction Structures
• Second Activation Energy in the Fractional Quantum Hall Effect
• Surface Smoothness and Step Bunching on GaAs (111)B Facets Formed by Molecular Beam Epitaxy

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