Growth and Electronic Properties of Self-Organized Quantum Rings
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
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PETROFF Pierre
Materials Department, University of California
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Petroff Pierre
Materials Department And Quest University Of California
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Garcia J
Materials Department And Quest University Of California
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LORKE Axel
Laboratorium fur Festkorperphysik, Gerhard-Mercator-Universitat, Lotharstr.
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LUYKEN R.
Sektion Physik und CeNS, LMU Munchen, Geschwister-Scholl-Platz
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GARCIA Jorge
Materials Department and QUEST, University of California
関連論文
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Growth and Electronic Properties of Self-Organized Quantum Rings
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots ( Quantum Dot Structures)
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Optical Up-Conversion Processes in InAs Quantum Dots
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots