Erratum: “Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”
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概要
- 論文の詳細を見る
- 2009-04-25
著者
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NAKAMURA Shuji
Solid State Lighting and Energy Center, Materials Department, University of California
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Fellows Natalie
Solid State Lighting And Energy Center Materials Department University Of California
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Masui Hisashi
Solid State Lighting And Energy Center Materials Department University Of California
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Sato Hitoshi
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5055, U.S.A.
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DenBaars Steven
Solid State Lighting and Display Center, University of California, Santa Barbara, CA 93106, U.S.A.
関連論文
- Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization
- Erratum: “Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”
- Continuous-wave Operation of AlGaN-cladding-free Nonpolar $m$-Plane InGaN/GaN Laser Diodes
- Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition